PART |
Description |
Maker |
BAS21M3T5G |
SOT-723 SS Switching Diode SIGNAL DIODE High Voltage Switching Diode
|
ON Semiconductor
|
KDS135 |
Switching Diode SILICON EPITAXIAL PLANAR DIODE (HIGH VOLTAGE SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
CPD74 |
Switching Diode Monolithic Isolated Quad Switching Diode Chip
|
Central Semiconductor Corp
|
BAS116LT1D BAS116LT3G BAS116LT1G |
Switching Diode Switching Diod 0.2 A, 75 V, SILICON, SIGNAL DIODE, TO-236AB
|
ON Semiconductor
|
SMBD914 MMBD914 |
0.25 A, 100 V, SILICON, SIGNAL DIODE Silicon Switching Diode For high-speed switching applications Qualified according AEC Q101
|
Infineon Technologies AG
|
CPD91V |
Switching Diode Low Leakage Switching Diode Chip
|
Central Semiconductor Corp
|
BAS521LP-7B BAS521LP-7 |
Discrete - Diodes (Less than 0.5A) - Switching Diodes 0.4 A, 325 V, SILICON, SIGNAL DIODE HIGH VOLTAGE SWITCHING DIODE
|
Diodes Incorporated
|
FE3B FE3D FE3C |
Diode Switching 100V 3A 2-Pin Case G-4 Diode Switching 200V 3A 2-Pin Case G-4 Diode Switching 150V 3A 2-Pin Case G-4
|
New Jersey Semiconductor
|
70HFL100 70HFLR100S05 70HFLR10S02 70HFL40 |
Diode Switching 100V 70A 2-Pin DO-5 Diode Switching 1KV 70A 2-Pin DO-5 Diode Switching 400V 70A 2-Pin DO-5
|
New Jersey Semiconductor
|
DCA01006 DCA010-TB-E |
Very High-Speed Switching Diode Silicon Epitaxial Planar Type (Anode Common) Very High-Speed Switching Diode
|
Sanyo Semicon Device
|
BAS16 Q62702-F739 |
Silicon Switching Diode (For high-speed switching) 0.25 A, SILICON, SIGNAL DIODE
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
1N4150-1 JANTXV1N4150-1 |
Signal or Computer Diode; Package: DO-35; IO (A): 0.2; Cj (pF): 2.5; Vrwm (V): 50; trr (nsec): 4; VF (V): 0.74; IR (µA): 0.1; 0.2 A, 50 V, SILICON, SIGNAL DIODE, DO-35 SWITCHING DIODE
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|